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Proceedings Paper

Comparison of the Ti/TiN/AlCu/TiN stack with TiN/AlCu/Ti/TiN stack for application in ULSI metallization
Author(s): Satish S. Menon; Ratan K. Choudhury
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Paper Abstract

The relative advantages and disadvantages of the two ULSI metallization stacks viz., Ti/TiN/AlCu/TiN and TiN/AlCu/Ti/TiN are described. The electromigration and thermal stability characteristics are compared using grain size of the Al metal, the XRD rocking curve peak and FWHM of the Al (111) orientation, SWEAT lifetime and electrical characteristics before and after thermal cycling of the test structures. In the literature, there exists work that report an improvement in the electromigration lifetime in the situation where Ti is in direct contact with Al due to the formation of TiAl3. The results for submicron dimensions presented in this paper clearly point to very important requirements for those results to hold and highlight the danger in assuming its validity for submicron lines. The W- plug via schemes resulting from use of both these metallization stacks will be compared from both the electrical and reliability standpoint. The conflict arising between the functionality and reliability of the vias with the reliability of the metallization lines is discussed.

Paper Details

Date Published: 13 September 1996
PDF: 12 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250881
Show Author Affiliations
Satish S. Menon, LSI Logic Corp. (United States)
Ratan K. Choudhury, LSI Logic Corp. (United States)


Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)

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