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Germanium ion implantation for trimming the coupling efficiency of silicon racetrack resonators
Author(s): Milan M. Milosevic; Xingshi Yu; Xia Chen; Ozan Aktas; Swe Zin Oo; Ali Z. Khokhar; David J. Thomson; Harold M. H. Chong; Anna C. Peacock; Shinichi Saito; Graham T. Reed
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Paper Abstract

In recent years, we have presented results on the development of a variety of silicon photonic devices such as erasable gratings and directional couplers, tunable resonators and Mach-Zehnder interferometers, and programmable photonic circuits using germanium ion implantation and localised laser annealing. In this paper we have carried out experiments to analyse a series of devices that can be fabricated using the same technology, particularly silicon-on-insulator racetrack resonators which are very sensitive to fabrication imperfections. Simulation and experimental results revealed the ability to permanently optimise the coupling efficiency of these structures by selective localised laser annealing.

Paper Details

Date Published: 4 March 2019
PDF: 6 pages
Proc. SPIE 10923, Silicon Photonics XIV, 109230R (4 March 2019); doi: 10.1117/12.2508805
Show Author Affiliations
Milan M. Milosevic, Univ. of Southampton (United Kingdom)
Xingshi Yu, Univ. of Southampton (United Kingdom)
Xia Chen, Univ. of Southampton (United Kingdom)
Ozan Aktas, Univ. of Southampton (United Kingdom)
Swe Zin Oo, Univ. of Southampton (United Kingdom)
Ali Z. Khokhar, Univ. of Southampton (United Kingdom)
David J. Thomson, Univ. of Southampton (United Kingdom)
Harold M. H. Chong, Univ. of Southampton (United Kingdom)
Anna C. Peacock, Univ. of Southampton (United Kingdom)
Shinichi Saito, Univ. of Southampton (United Kingdom)
Graham T. Reed, Univ. of Southampton (United Kingdom)


Published in SPIE Proceedings Vol. 10923:
Silicon Photonics XIV
Graham T. Reed; Andrew P. Knights, Editor(s)

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