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Optical phase change materials in integrated silicon photonic devices (Conference Presentation)

Paper Abstract

Silicon photonics is considered to be the leading platform to achieve faster data transfer speeds on-chip. However, the weak electro-optic coefficient of silicon limits the maximum achievable single channel data rates. A hybrid solution consisting of a silicon photonic backbone and an incorporated optical phase change material that provides improved optical functionality may provide the solution for realizing broadband, low power, small footprint on-chip photonic devices capable of achieving record modulation speed. In this presentation, we discuss theoretical and experimental work integrating vanadium dioxide and GST in thermo-optic, electro-optic, and all-optical silicon photonic devices. Future directions will also be discussed.

Paper Details

Date Published: 4 March 2019
Proc. SPIE 10922, Smart Photonic and Optoelectronic Integrated Circuits XXI, 109220K (4 March 2019); doi: 10.1117/12.2508781
Show Author Affiliations
Sharon M. Weiss, Vanderbilt Univ. (United States)
Richard F. Haglund Jr., Vanderbilt Univ. (United States)

Published in SPIE Proceedings Vol. 10922:
Smart Photonic and Optoelectronic Integrated Circuits XXI
Sailing He; El-Hang Lee, Editor(s)

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