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Proceedings Paper

Scaling considerations of interpoly oxide-nitride-oxide dielectric for high-density DRAM applications
Author(s): Zhijian Ma; Jeong Yeol Choi; Chuen-Der Lien
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Paper Abstract

Highly reliable thin oxide-nitride-oxide (ONO) stacked dielectrics with oxide-equivalent thickness Tox,eq in the range of 34 - 68 angstroms were fabricated using conventional furnaces and an RTA machine. Rapid Thermal Nitridation (RTN) in NH3 ambient of smooth poly-Si prior to Si2N4 deposition is found to be critical for improving dielectric integrity and low-field leakage current of the ONO stacked dielectrics. This RTN process also significantly improves oxygen diffusion resistance of ultra- thin Si2N4 film. As a result, 22 angstroms LPCVD Si2N4 is adequate to sustain wet oxidation at 800 degree(s)C without any oxygen diffusion through it, which results in a manufacturable and reliable Tox,eq equals 45 angstroms ONO stacked dielectric. By using rugged poly-Si as a bottom electrode plus RTN process, ONO stacked dielectric can be scaled down to about Tox,eq equals 34 angstroms without any leakage or reliability problems.

Paper Details

Date Published: 13 September 1996
PDF: 6 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250866
Show Author Affiliations
Zhijian Ma, Integrated Device Technology, Inc. (United States)
Jeong Yeol Choi, Integrated Device Technology, Inc. (United States)
Chuen-Der Lien, Integrated Device Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)

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