Share Email Print
cover

Proceedings Paper

Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications
Author(s): Byeong Y. Kim; Dirk Wristers; Dim-Lee Kwong
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

This paper reviews recent developments in N2O- and NO- based oxynitride gate dielectrics for CMOS ULSI applications. The motivations and significant advantages of N2O/NO-based ultrathin oxynitride gate dielectrics for dual-gate CMOS ULSI are reviewed. Results will be presented to demonstrate the superior device reliability of ultra thin N2O/NO oxides over the control oxides, with particular focus on boron diffusion barrier properties, TDDB, and MOSFET hot carrier immunity.

Paper Details

Date Published: 13 September 1996
PDF: 13 pages
Proc. SPIE 2875, Microelectronic Device and Multilevel Interconnection Technology II, (13 September 1996); doi: 10.1117/12.250864
Show Author Affiliations
Byeong Y. Kim, Univ. of Texas/Austin (United States)
Dirk Wristers, Univ. of Texas/Austin (United States)
Dim-Lee Kwong, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 2875:
Microelectronic Device and Multilevel Interconnection Technology II
Ih-Chin Chen; Nobuo Sasaki; Divyesh N. Patel; Girish A. Dixit, Editor(s)

© SPIE. Terms of Use
Back to Top