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Impact of ultra-thin quaternary capping on modulation doped p-i-p quantum dots (InAs/GaAs) based infrared detector
Author(s): Vidya P. Deviprasad; Hemant Ghadi; Debabrata Das; Debiprasad Panda; Subhananda Chakrabarti
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Paper Abstract

In this study, we demonstrate the device performance of modulation doped InAs/GaAs p-i-p QDIP (device A) and the effect of thin 1 nm quaternary (InAlGaAs) capping on the same heterostructure (device B). The ground state emission peak at 9 K from photoluminescence spectroscopy was measured at 1055.1 nm and 1046.4 nm for sample A and B, respectively. The measured dark current densities at 75 K for an applied bias of -1 V were 1.079 A/cm−2 and 0.038 A/cm−2 for device A and B, respectively. The fabricated single pixel detectors from device A exhibited emission peak in short wave infrared regime whereas whereas device B exhibited a multicolour spectral response from short wave (SWIR) to mid wave infrared (MWIR) region. The measured spectral peaks at low temperature were at 2 and 2.39 μm for device A and at 2.013, 2.49, 3.49 and 4.36 μm with a dominant peak in SWIR region for device B. Both the devices exhibited spectral response peak up to 75K with a responsivity of 0.832 A/W for device A compared to that of 0.545 A/W for device B at -2.5V bias. Tunability in detection peak with improvement in device performance was achieved by incorporating additional quaternary capping.

Paper Details

Date Published: 4 March 2019
PDF: 7 pages
Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 1092911 (4 March 2019); doi: 10.1117/12.2508615
Show Author Affiliations
Vidya P. Deviprasad, Indian Institute of Technology Bombay (India)
Hemant Ghadi, Indian Institute of Technology Bombay (India)
Debabrata Das, Indian Institute of Technology Bombay (India)
Debiprasad Panda, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 10929:
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI
Diana L. Huffaker; Holger Eisele, Editor(s)

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