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Investigation of carrier-confinement and dark current minimization in In0.5Ga0.5As QDIP with the incorporation of In0.21Al0.21Ga0.58As/GaAs capping
Author(s): Ravinder Kumar; Debiprasad Panda; Debabrata Das; Vinayak Chavan; Raman Kumar; Subhananda Chakrabarti; Sreedhara Sheshadri
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Paper Abstract

The improvement in performance of In0.5Ga0.5As Quantum Dot Infrared Photodetector (QDIP) has been investigated by introducing Al in the In0.15Ga0.85As capping layer. The QDIPs are consist of ten uncoupled In0.5Ga0.5As dot layers with 3/47 nm Inx(Aly(~x))Ga1-x-yAs/GaAs capping. The monolayer coverage for both QDIPs is 6, which accommodate an overgrowth percentage of 59%. A FWHM (46.59 nm) and higher activation energy (267 meV) has been obtained for the ground state photoluminescence emission due to the incorporation of Al in the InGaAs capping layer. This indicates better carrier confinement and homogeneous dot size distribution in the quaternary (In0.21Al0.21Ga0.58As) capped QD structure with respect to the ternary (In0.15Ga0.85As) capped QD. A six order reduction in dark current density has been obtained in the InGaAs QDIP due to the incorporation of Al in the capping layer. The narrow spectral width of 0.07 for the transition peak at 7.8 μm represents the homogeneous dot size distribution in the InAlGaAs/GaAs capped QDIP heterostructure.

Paper Details

Date Published: 4 March 2019
PDF: 10 pages
Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 1092910 (4 March 2019); doi: 10.1117/12.2508488
Show Author Affiliations
Ravinder Kumar, Indian Institute of Technology Bombay (India)
Debiprasad Panda, Indian Institute of Technology Bombay (India)
Debabrata Das, Indian Institute of Technology Bombay (India)
Vinayak Chavan, Indian Institute of Technology Bombay (India)
Raman Kumar, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
Sreedhara Sheshadri, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 10929:
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI
Diana L. Huffaker; Holger Eisele, Editor(s)

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