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Growth of GaN nanowire on indium-tin-oxide coated fused silica for simultaneous transparency and conductivity (Conference Presentation)
Author(s): Aditya Prabaswara; Jung-Wook Min; Malleswara R. Tangi; Ram Chandra Subedi; Davide Priante; Tien Khee Ng; Boon S. Ooi
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Paper Abstract

Growing III-nitride materials on unconventional substrates is attractive since it gives the possibility to fabricate novel devices at a potentially reduced cost. Spontaneously grown III-nitride nanowire structure is capable of achieving this goal, as they provide the capability to epitaxially grow high-quality single crystalline structures without global lattice and thermal matching requirement between the material and the substrate. In this work, we present the growth and characterization of GaN nanowire using plasma-assisted molecular beam epitaxy (PA-MBE) using an indium tin oxide (ITO)-coated silica substrate. The nanowires are shown to grow in the [0001] direction perpendicular to the substrate plane, with n-polar polarity. We found that the lateral size of the nanowires closely follows the grain size of the underlying ITO layer. Temperature-dependent photoluminescence measurement indicates a high-quality GaN material as indicated by the high internal quantum efficiency value. Conductive AFM measurement was performed to evaluate the feasibility of utilizing the GaN nanowire on ITO for device fabrication. By growing GaN nanowires on top of ITO-coated silica substrate, we open up the possibility of fabricating transparent nitride-based devices using transparent scalable substrate.

Paper Details

Date Published: 8 March 2019
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Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180B (8 March 2019); doi: 10.1117/12.2508386
Show Author Affiliations
Aditya Prabaswara, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Jung-Wook Min, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Malleswara R. Tangi, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Ram Chandra Subedi, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Davide Priante, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Tien Khee Ng, King Abdullah Univ. of Science and Technology (Saudi Arabia)
Boon S. Ooi, King Abdullah Univ. of Science and Technology (Saudi Arabia)


Published in SPIE Proceedings Vol. 10918:
Gallium Nitride Materials and Devices XIV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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