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Proceedings Paper

Real-time determination of interconnect metrology
Author(s): Shadi Alex AbuGhazaleh; Phillip Christie
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Paper Abstract

Poor control of wire geometry can result in unacceptable variations in signal propagation velocity and cross-talk. A novel laser diffraction technique for the real-time determination of global interconnect metrology is presented and tested on several different types of chips. Analysis of the diffraction patterns produced by He-Cd (lambda equals 442 nm) and He-Ne (lambda equals 633 nm) laser irradiation of the interconnect structure is shown to reveal global information on variations in wiring parameters. The diffraction intensity profile for a commercial microprocessor fabricated using 2 micrometer design rules is used to test the validity of the approach. Standard diffraction theory reveals that the process variation in wire pitch is of the order of 9%, a value confirmed by examination under a phase contrast microscope. In addition to wire pitch variations the diffraction technique is also used for the measurement of the characteristic fractal dimension of the wiring. Initial results indicate that these measurements may provide an extremely rapid method of assessing important wiring figures of merit, such as the on- chip Rent exponent.

Paper Details

Date Published: 12 September 1996
PDF: 6 pages
Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); doi: 10.1117/12.250836
Show Author Affiliations
Shadi Alex AbuGhazaleh, Univ. of Delaware (United States)
Phillip Christie, Univ. of Delaware (United States)


Published in SPIE Proceedings Vol. 2874:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II
Ali Keshavarzi; Sharad Prasad; Hans-Dieter Hartmann, Editor(s)

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