Share Email Print
cover

Proceedings Paper

Laser chemical vapor deposition of Cu and Ni in integrated circuit repair
Author(s): Seppo Leppaevuori; Janne Remes; Hannu Moilanen
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Laser-assisted chemical vapor deposition (LCVD) of nickel from Ni(CO)4 and copper from Cu(hfac)tmvs was utilized in the restructuring of an integrated circuit (IC) interconnection. Nickel and copper lines were deposited on passivated ICs by using a focused Ar+ laser beam to achieve new local rewirings on the chip. Nickel line depositions were carried out over the pressure range of 0.2 to 2.2 mbar of Ni(CO)4 buffered in 200 - 800 mbar He. The typical laser beam scan speed was 24 micrometers per second for both metals. The Cu(hfac)tmvs precursor gas partial pressure was 0.3 mbar buffered in 10 mbar He or H2 and typical laser scan speed was 24 micrometers per second. The morphology and chemical contents of the deposited interconnection microstructures was examined by atomic force microscopy (AFM), optical microscopy and laser ionization mass analysis (LIMA). The LIMA analysis indicated that the deposited copper surface was contaminated but the contamination level decreased when the layer was depth profiled. The deposited Ni lines were found to be pure Ni with only traces of carbon contamination. The utilization of XeCl excimer laser in the cutting of Al and Mo conductor lines and passivation contact via opening for IC modification is also described. LCVD method was successful in numerous different IC failure inspection and circuit modification cases.

Paper Details

Date Published: 12 September 1996
PDF: 11 pages
Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); doi: 10.1117/12.250835
Show Author Affiliations
Seppo Leppaevuori, Univ. of Oulu (Finland)
Janne Remes, Univ. of Oulu (Finland)
Hannu Moilanen, Univ. of Oulu (Finland)


Published in SPIE Proceedings Vol. 2874:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II
Ali Keshavarzi; Sharad Prasad; Hans-Dieter Hartmann, Editor(s)

© SPIE. Terms of Use
Back to Top