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Proceedings Paper

Back side emission microscopy for failure analysis
Author(s): Nevil M. Wu; Kenneth Tang; James H. Lin
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Paper Abstract

Due to increasing complex structures, such as multiple metal layers, high density circuits, and wide metal buses, on a die of an integrated circuit (IC) and specially packaged devices, such as flip chips and lead on chips, the traditional front side emission microscopy is no longer effective or cannot be applied. The back side emission microscopy is the alternative. It is a very useful, necessary, and complementary method to the front side emission microscopy in failure analysis. In this paper, photon emission mechanism and spectrum from a silicon die are first discussed. It explains that the emission intensity for the most occurred two emission types (forward and reverse biased junctions) from a die back side is about the same as or comparative to that from the die front side. Next, the five factors which mostly affect the emission intensity from the die back side are discussed. Last, several examples are given.

Paper Details

Date Published: 12 September 1996
PDF: 10 pages
Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); doi: 10.1117/12.250832
Show Author Affiliations
Nevil M. Wu, LSI Logic Corp. (United States)
Kenneth Tang, LSI Logic Corp. (United States)
James H. Lin, LSI Logic Corp. (United States)


Published in SPIE Proceedings Vol. 2874:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II
Ali Keshavarzi; Sharad Prasad; Hans-Dieter Hartmann, Editor(s)

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