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Proceedings Paper

Source drain leakage: a potential problem in submicron CMOS devices
Author(s): Yeoh Eng Hong; Ali Keshavarzi; Martin Tay
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Paper Abstract

As transistor dimension shrinks down below submicron to cater for higher speed and higher packing density, it is very important to ensure that the shrinkage is done painstakingly to avoid unwanted leakage problems. This paper reports the discovery of two new failure mechanisms, short poly end-cap and silicon dislocation, that are found to cause subtle source drain leakage in sub-micron CMOS product. The electrical characteristics of the failure and the special techniques that are employed to fault isolate the problem are also discussed in this paper.

Paper Details

Date Published: 12 September 1996
PDF: 6 pages
Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); doi: 10.1117/12.250831
Show Author Affiliations
Yeoh Eng Hong, Intel Technology Sdn. Bhd. (Malaysia)
Ali Keshavarzi, Intel Technology Sdn. Bhd. (United States)
Martin Tay, Intel Technology SDN-BHD (Malaysia)


Published in SPIE Proceedings Vol. 2874:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II
Ali Keshavarzi; Sharad Prasad; Hans-Dieter Hartmann, Editor(s)

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