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Proceedings Paper

Sampling-based yield prediction for ULSI
Author(s): Gerard A. Allan; Anthony J. Walton
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Paper Abstract

This paper reports a method for estimating critical areas and hence the yield of ULSI devices using survey sampling techniques. The approach does not suffer from the restrictions of previously reported methods of critical area estimation. In particular its practical application is not limited by the size of the device or the nature of the design hierarchy. The method makes possible, for the first time, efficient and accurate yield predictions of the most complex state-of-the-art devices using modest computing resources.

Paper Details

Date Published: 12 September 1996
PDF: 12 pages
Proc. SPIE 2874, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II, (12 September 1996); doi: 10.1117/12.250828
Show Author Affiliations
Gerard A. Allan, Univ. of Edinburgh (United Kingdom)
Anthony J. Walton, Univ. of Edinburgh (United Kingdom)

Published in SPIE Proceedings Vol. 2874:
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis II
Ali Keshavarzi; Sharad Prasad; Hans-Dieter Hartmann, Editor(s)

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