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Fabrication of a quasi-phase-matching stack of 53 GaAs plates for high-power mid-infrared wavelength conversion by use of room-temperature bonding
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Paper Abstract

Using the room-temperature-bonding technique, we have succeeded in fabricating a quasi-phase-matching (QPM) stack of 53 GaAs plates with each thickness of 106 μm and aperture of 5.5 × 5.0 mm for second-harmonic generation of a CO2 laser at 10.6 μm. An improved process was applied which realized fine alignment of the GaAs plates on the translation stage. The fabricated 5.6 mm long, 53 plate-stacked GaAs-QPM device generated 20 times higher secondharmonic power than the previously fabricated 0.95 mm long QPM stack of nine GaAs plates.

Paper Details

Date Published: 4 March 2019
PDF: 6 pages
Proc. SPIE 10902, Nonlinear Frequency Generation and Conversion: Materials and Devices XVIII, 109020I (4 March 2019); doi: 10.1117/12.2508194
Show Author Affiliations
Hiroki Takase, Chuo Univ. (Japan)
Hiroki Atarashi, Chuo Univ. (Japan)
Tsubasa Kaga, Chuo Univ. (Japan)
Ichiro Shoji, Chuo Univ. (Japan)


Published in SPIE Proceedings Vol. 10902:
Nonlinear Frequency Generation and Conversion: Materials and Devices XVIII
Peter G. Schunemann; Kenneth L. Schepler, Editor(s)

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