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USHIO 3.5W red laser diode for projector light source
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Paper Abstract

Laser light source projector becomes popular due to the features of high brightness, wide color gamut and long lifetime of laser light source. One of the key performances that the market continues to request is the higher output power from the single laser diode. To meet the market demand and accelerate the laser projector installation, we developed AlGaInP based 638nm 3.5W pulse / 2.4W CW red laser diode for projector light source. We designed new chip with dual emitters in one chip with each emitter width of 75μm. The chip was then assembled into diameter 9mm TO-CAN package. The highest power at high temperature achieved 45°C 3.9W, 55°C 3.1W under pulsed operation with frequency 120Hz duty 30%, in case of CW operation 45°C 3.0W, 55°C 2.1W. The wall plug efficiency (WPE) at 25°C was reached each 43% under pulsed operation and 42% under CW operation. As a result of life test at 20°C 3.5W 5,500hours under CW operation and 45°C 3.5W 1,500hours under pulsed operation with frequency 120Hz duty 35%, the estimated life was exceeded MTTF 20,000 hours under 45°C 3.5W pulsed operation. The 3.5W pulsed operation and WPE of 43% are the world’s highest in 638nm LD to the best of our knowledge. This newly developed LD is suitable for red light source for projector.

Paper Details

Date Published: 1 March 2019
PDF: 10 pages
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109391I (1 March 2019); doi: 10.1117/12.2507834
Show Author Affiliations
Masato Hagimoto, Ushio Opto Semiconductors, Inc. (Japan)
Shintaro Miyamoto, Ushio Opto Semiconductors, Inc. (Japan)
Yuki Kimura, Ushio Opto Semiconductors, Inc. (Japan)
Haruki Fukai, Ushio Opto Semiconductors, Inc. (Japan)
Manabu Hashizume, Ushio Opto Semiconductors, Inc. (Japan)
Satoshi Kawanaka, Ushio Opto Semiconductors, Inc. (Japan)


Published in SPIE Proceedings Vol. 10939:
Novel In-Plane Semiconductor Lasers XVIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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