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Recent progress in distributed feedback InGaN/GaN laser diodes
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Paper Abstract

Laser diodes based on Gallium Nitride (GaN) are useful devices in a wide range of applications including atomic spectroscopy, data storage and optical communications. To fully exploit some of these application areas there is a need for a GaN laser diode with high spectral purity, e.g. in atomic clocks, where a narrow linewidth blue laser source can be used to target the atomic cooling transition. We report on the continuous wave, room temperature operation of a distributed feedback laser diode (DFB-LD) with high-order notched gratings. The design, fabrication and characterization of DFB devices based on the (Al,In) GaN material system is described. A single peak emission at 408.6 nm with an optical power of 20 mW at 225 mA and a side mode suppression ratio (SMSR) of 35 dB was achieved. Additionally, we demonstrate the use of a GaN DFB-LD as a transmitter in visible optical communications system. We also present results from a DFB-LD optimized for laser cooling of Sr+.

Paper Details

Date Published: 1 March 2019
PDF: 6 pages
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390I (1 March 2019); doi: 10.1117/12.2507630
Show Author Affiliations
Thomas J. Slight, Compound Semiconductor Technologies Global Ltd. (United Kingdom)
Scott Watson, Univ. of Glasgow (United Kingdom)
Shaun Viola, Univ. of Glasgow (United Kingdom)
Amit Yadav, Aston Univ. (United Kingdom)
Szymon Stanczyk, TopGaN Ltd. (Poland)
Szymon Grzanka, TopGaN Ltd. (Poland)
Steffan Gwyn, Univ. of Glasgow (United Kingdom)
Edik Rafailov, Aston Univ. (United Kingdom)
Piotr Perlin, TopGaN Ltd. (Poland)
Stephen P. Najda, TopGaN Ltd. (Poland)
Mike Leszczyński, TopGaN Ltd. (Poland)
Mohsin Haji, National Physical Lab. (United Kingdom)
Anthony E. Kelly, Univ. of Glasgow (United Kingdom)


Published in SPIE Proceedings Vol. 10939:
Novel In-Plane Semiconductor Lasers XVIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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