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Proceedings Paper

In-situ thin film stress measurement using high-stability portable holographic interferometer
Author(s): George Eugene Dovgalenko; M. Shahid Haque; Anatoli Kniazkov; Yuri I. Onischenko; Gregory J. Salamo; Hameed A. Naseem
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Paper Abstract

A stress in thin film SiO2 was detected using high stability portable holographic interferometer. A stress relaxation phenomenon in this film thickness of 0.5 micrometers on Si wafer has been observed. This phenomenon does not exist in film with thickness of 1 micrometers . The advantages of the proposed measured technique and results are discussed.

Paper Details

Date Published: 18 September 1996
PDF: 5 pages
Proc. SPIE 2782, Optical Inspection and Micromeasurements, (18 September 1996); doi: 10.1117/12.250758
Show Author Affiliations
George Eugene Dovgalenko, Univ. of Arkansas (United States)
M. Shahid Haque, Univ. of Arkansas (United States)
Anatoli Kniazkov, Univ. of Arkansas (United States)
Yuri I. Onischenko, Univ. of Arkansas (United States)
Gregory J. Salamo, Univ. of Arkansas (United States)
Hameed A. Naseem, Univ. of Arkansas (United States)

Published in SPIE Proceedings Vol. 2782:
Optical Inspection and Micromeasurements
Christophe Gorecki, Editor(s)

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