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Challenges for highly-reliable GaN-based LEDs
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Paper Abstract

Within this paper, we summarize some of the degradation mechanism that still affect GaN-based optoelectronic devices. The most common source of the degradation is the creation of lattice defects, which lower the optical efficiency due to their role as non-radiative recombination centers, as proven in the case of UV-B LEDs. The local generation of defects is not the only possibility, with diffusion of impurities (possibly hydrogen from the p-side) being shown to be the limiting factor in the case of green laser diodes. Under extreme bias conditions, such as the EOS events, the robustness of the current carriers and spreading structures is critical, as shown by failure of bonding wires, metal lines and vias in white LEDs. In every optoelectronic device photons themselves possess an energy at least equal to the bandgap, and can be an additional source of degradation that cannot be eliminated.

Paper Details

Date Published: 1 March 2019
PDF: 7 pages
Proc. SPIE 10940, Light-Emitting Devices, Materials, and Applications, 109400I (1 March 2019); doi: 10.1117/12.2507533
Show Author Affiliations
Enrico Zanoni, Univ. degli Studi di Padova (Italy)
Carlo De Santi, Univ. degli Studi di Padova (Italy)
Nicola Trivellin, Univ. degli Studi di Padova (Italy)
Nicola Renso, Univ. degli Studi di Padova (Italy)
Matteo Buffolo, Univ. degli Studi di Padova (Italy)
Desiree Monti, Univ. degli Studi di Padova (Italy)
Alessandro Caria, Univ. degli Studi di Padova (Italy)
Francesco Piva, Univ. degli Studi di Padova (Italy)
Gaudenzio Meneghesso, Univ. degli Studi di Padova (Italy)
Matteo Meneghini, Univ. degli Studi di Padova (Italy)


Published in SPIE Proceedings Vol. 10940:
Light-Emitting Devices, Materials, and Applications
Jong Kyu Kim; Michael R. Krames; Martin Strassburg, Editor(s)

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