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GaN laser diodes for quantum sensors, clocks, systems and computing
Author(s): S. P. Najda; P. Perlin; M. Leszczynski; S. Stanczyk; C. C. Clark; T. J. Slight; J. Macarthur; L. Prade; L. McKnight
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Paper Abstract

Quantum technologies containing key GaN laser components will enable a new generation of precision sensors, optical atomic clocks and secure communication systems for many applications such as next generation navigation, gravity mapping and timing since the AlGaInN material system allows for laser diodes to be fabricated over a wide range of wavelengths from the u.v. to the visible.

Paper Details

Date Published: 13 May 2019
PDF: 6 pages
Proc. SPIE 10984, Quantum Information Science, Sensing, and Computation XI, 1098406 (13 May 2019); doi: 10.1117/12.2507453
Show Author Affiliations
S. P. Najda, TopGaN Ltd. (Poland)
P. Perlin, TopGaN Ltd. (Poland)
M. Leszczynski, TopGaN Ltd. (Poland)
S. Stanczyk, TopGaN Ltd. (Poland)
C. C. Clark, Helia Photonics Ltd. (United Kingdom)
T. J. Slight, Compound Semiconductor Technologies Global Ltd. (United Kingdom)
J. Macarthur, Fraunhofer Ctr. of Applied Photonics (United Kingdom)
L. Prade, Fraunhofer Ctr. of Applied Photonics (United Kingdom)
L. McKnight, Fraunhofer Ctr. of Applied Photonics (United Kingdom)


Published in SPIE Proceedings Vol. 10984:
Quantum Information Science, Sensing, and Computation XI
Eric Donkor; Michael Hayduk; Michael R. Frey; Samuel J. Lomonaco Jr.; John M. Myers, Editor(s)

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