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A comparative analysis of the catastrophic degradation of AlGaAs/GaAs and AlGaAs/InGaAs laser diodes: role of the strained QWs
Author(s): J. Souto; J. L. Pura; A. Torres; J. Jimenéz
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Paper Abstract

Strained InGaAs QW lasers present a high power threshold for catastrophic optical damage (COD) as compared to lattice matched AlGaAs QW lasers. The reason for the higher resilience of strained QW lasers is not yet well understood. We analyze the catastrophic optical damage (COD) as a consequence of the dislocations generated by local thermal stresses. The thermomechanical problem is solved for both strained and lattice matched QW lasers. Also, we analyze the role played by point defects in both lasers as root causes of the degradation. The main factors contributing to the robustness of strained QW lasers are discussed.

Paper Details

Date Published: 4 March 2019
PDF: 6 pages
Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000Q (4 March 2019); doi: 10.1117/12.2507435
Show Author Affiliations
J. Souto, Univ. de Valladolid (Spain)
J. L. Pura, Univ. de Valladolid (Spain)
A. Torres, Univ. de Valladolid (Spain)
J. Jimenéz, Univ. de Valladolid (Spain)

Published in SPIE Proceedings Vol. 10900:
High-Power Diode Laser Technology XVII
Mark S. Zediker, Editor(s)

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