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Proceedings Paper

Measurement of the strain field in a micrometer-sized region at a notch tip
Author(s): Edoardo Mazza; Jurg Dual; C. R. Musil; Gaudenz Danuser; Martin Vetterli
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Paper Abstract

In single crystal silicon microstructures produced by anisotropic etching, sharp notches are present. In order to investigate the material behavior and to define design parameters, measurements of the strain field in a micrometer-sized region at the notch tip are performed. The microstructure is loaded by bending and the strain is estimated by analyzing images obtained with a scanning ion microscope. The observed region has been previously marked with an array of square boxes spaced 500 nm center to center. The boxes are drawn by focused ion beam implantation. The image analysis is realized with a new algorithm with high superresolution capabilities which provides an estimation for a strain component and its standard deviation. The so-called `near field solution' for the infinitesimal strain field at the notch tip can be calculated analytically. The excellent agreement of the experimental values with the analytical as well as numerical calculations confirms the validity of the continuum mechanics approach for the mechanical characterization of micrometer-sized structures.

Paper Details

Date Published: 18 September 1996
PDF: 9 pages
Proc. SPIE 2782, Optical Inspection and Micromeasurements, (18 September 1996); doi: 10.1117/12.250741
Show Author Affiliations
Edoardo Mazza, Swiss Federal Institute of Technology (Switzerland)
Jurg Dual, Swiss Federal Institute of Technology (Switzerland)
C. R. Musil, Paul Scherrer Institute (Switzerland)
Gaudenz Danuser, Swiss Federal Institute of Technology (Switzerland)
Martin Vetterli, Swiss Federal Institute of Technology (Switzerland)


Published in SPIE Proceedings Vol. 2782:
Optical Inspection and Micromeasurements
Christophe Gorecki, Editor(s)

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