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Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates
Author(s): Melisa Ekin Gulseren; Berkay Bozok; Gokhan Kurt; Omer Ahmet Kayal; Mustafa Ozturk; Sertac Ural; Bayram Butun; Ekmel Ozbay
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Paper Abstract

A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude.

Paper Details

Date Published: 1 March 2019
PDF: 7 pages
Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109181A (1 March 2019); doi: 10.1117/12.2507398
Show Author Affiliations
Melisa Ekin Gulseren, Bilkent Univ. (Turkey)
Berkay Bozok, Bilkent Univ. (Turkey)
Gokhan Kurt, Bilkent Univ. (Turkey)
Omer Ahmet Kayal, Bilkent Univ. (Turkey)
Mustafa Ozturk, Bilkent Univ. (Turkey)
Sertac Ural, Bilkent Univ. (Turkey)
Bayram Butun, Bilkent Univ. (Turkey)
Ekmel Ozbay, Bilkent Univ. (Turkey)

Published in SPIE Proceedings Vol. 10918:
Gallium Nitride Materials and Devices XIV
Hiroshi Fujioka; Hadis Morkoç; Ulrich T. Schwarz, Editor(s)

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