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High-yield parallel transfer print integration of III-V substrate-illuminated C-band photodiodes on silicon photonic integrated circuits
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Paper Abstract

Transfer printing is an enabling technology for the efficient integration of III-V semiconductor devices on a silicon waveguide circuit. In this paper we discuss the transfer printing of substrate-illuminated III-V C-band photodetectors on a silicon photonic waveguide circuit. The devices were fabricated on an InP substrate, encapsulated and underetched in FeCl3, held in place by photoresist tethers. Using a 2x2 arrayed PDMS stamp with a pitch of 500 μm in x-direction and 250 μm in y-direction the photodiodes were transfer printed onto DVS-BCB-coated SOI waveguide circuits interfaced with grating couplers. 83 out of 84 devices were successfully integrated

Paper Details

Date Published: 4 March 2019
PDF: 9 pages
Proc. SPIE 10923, Silicon Photonics XIV, 1092305 (4 March 2019); doi: 10.1117/12.2507373
Show Author Affiliations
Grigorij Muliuk, Univ. Gent (Belgium)
Jing Zhang, Univ. Gent (Belgium)
Jeroen Goyvaerts, Univ. Gent (Belgium)
Sulakshna Kumari, Univ. Gent (Belgium)
Brian Corbett, Tyndall National Institute (Ireland)
Dries Van Thourhout, Univ. Gent (Belgium)
Günther Roelkens, Univ. Gent (Belgium)


Published in SPIE Proceedings Vol. 10923:
Silicon Photonics XIV
Graham T. Reed; Andrew P. Knights, Editor(s)

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