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Silicon photomultipliers with 8-um thick substrate for enhancing photo-sensitivity in the 900-nm range and reducing afterpulse and delayed crosstalk
Author(s): Yuki Nobusa; Honam Kwon; Ikuo Fujiwara; Keita Sasaki; Kazuhiro Suzuki
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Paper Abstract

Light detection and ranging (LiDAR) systems are potential candidates as sensing systems for autonomous driving. Light sensor performance is highly related to the distance measuring capabilities of the LiDAR system. Silicon photomultipliers (SiPM) have attracted attention because of their capability for detecting even single photons of light. To increase the utilization efficiency of incident light, we thinned the SiPM substrate for light reflectance in the structure to a thickness of 8 μm. This improved photon detection efficiency (PDE) to 1.6 times that of a 700-μm device at an exceeding voltage of 4.0 V above the avalanche breakdown voltage. By reducing diffusion carriers from the substrate, time-lagged signals such as afterpulse or delayed crosstalk were suppressed to 60 %.

Paper Details

Date Published: 4 March 2019
PDF: 10 pages
Proc. SPIE 10921, Integrated Optics: Devices, Materials, and Technologies XXIII, 109212E (4 March 2019); doi: 10.1117/12.2507370
Show Author Affiliations
Yuki Nobusa, Toshiba Corp. (Japan)
Honam Kwon, Toshiba Corp. (Japan)
Ikuo Fujiwara, Toshiba Corp. (Japan)
Keita Sasaki, Toshiba Corp. (Japan)
Kazuhiro Suzuki, Toshiba Corp. (Japan)

Published in SPIE Proceedings Vol. 10921:
Integrated Optics: Devices, Materials, and Technologies XXIII
Sonia M. García-Blanco; Pavel Cheben, Editor(s)

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