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Wide-bandwidth low-threshold THz frequency combs (Conference Presentation)
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Paper Abstract

Recently, on-chip quantum-cascade-laser-based frequency combs are gaining increasing attention both in the Mid-IR and in the THz spectral regions. THz devices offer the possibility of filling the gap of comb sources in a spectral region were no table top comb is available. We report on THz comb emission from homogeneous quantum cascade laser structure with a new active region design. It features a very low threshold current density (< 100 A/cm2), extremely wide bandwidth (>1 THz) extending from 3 THz to 4.2 THz and peculiar broadband behavior in the NDR region suggesting the presence of field domains. Time resolved spectral measurements employing an hot electron bolometer demonstrate the simultaneous lasing of all the modes in the NDR region and beatnote spectroscopy based on self-mixing proves the coherent nature of the broadband laser emission. Active control of the repetition rate is also demonstrated by using an external cavity scheme employing a piezo actuator. This active region is very promising for the future integration in an heterogeneous structure for octave spanning comb operation and also as an homogenous comb device

Paper Details

Date Published: 8 March 2019
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Proc. SPIE 10926, Quantum Sensing and Nano Electronics and Photonics XVI, 109262J (8 March 2019); doi: 10.1117/12.2507299
Show Author Affiliations
Giacomo Scalari, ETH Zurich (Switzerland)
Tudor Olariu, ETH Zurich (Switzerland)
Andres Forrer, ETH Zurich (Switzerland)
David Stark, ETH Zurich (Switzerland)
Mattias Beck, ETH Zurich (Switzerland)
Jerome Faist, ETH Zurich (Switzerland)


Published in SPIE Proceedings Vol. 10926:
Quantum Sensing and Nano Electronics and Photonics XVI
Manijeh Razeghi, Editor(s)

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