Share Email Print
cover

Proceedings Paper

Antenna-coupled rectifying diode for IR detection
Author(s): Hideaki Yamagishi; Hitoshi Hara; Nobuhiko Kanbara; Yasushi Onoe; Naoki Kishi
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

An antenna-coupled rectifying SChottky Barrier DIode (SBD) for IR detection is fabricated on Si by IC processes. Aluminum thin film antenna of 30 micrometers length and 1.5 micrometers width is formed on thermally grown SiO2 layer on Si. At the end of antenna, rectifying SBD of 0.03 micrometers diameter is formed by focused ion beam (FIB) milling technique. Ion current monitoring system with FIB largely reduced the size of milled hole, which is conventionally limited by ion beam waist diameter. IR radiation from CO2 laser of 10.6 micrometers in wavelength and 0.55 W in power is used for device evaluations. Signal dependence on incident angle of CO2 laser radiation and dependence on diode bias voltage are evaluated. We confirmed the rectifying operation of antenna- coupled SBD at IR region and experimentally obtained rectified voltage of 173 nV. The NEP is calculated to be 1.94 X 10-6 W/Hz-1/2.

Paper Details

Date Published: 17 September 1996
PDF: 9 pages
Proc. SPIE 2882, Micromachined Devices and Components II, (17 September 1996); doi: 10.1117/12.250727
Show Author Affiliations
Hideaki Yamagishi, Yokogawa Electric Corp. (Japan)
Hitoshi Hara, Yokogawa Electric Corp. (Japan)
Nobuhiko Kanbara, Yokogawa Electric Corp. (Japan)
Yasushi Onoe, Yokogawa Electric Corp. (Japan)
Naoki Kishi, Yokogawa Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 2882:
Micromachined Devices and Components II
Kevin H. Chau; Ray M. Roop, Editor(s)

© SPIE. Terms of Use
Back to Top