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Proceedings Paper

Strain sensitive resonant gate transistor
Author(s): Shun-ichi Miyazaki; Takashi Yoshida; Kyoichi Ikeda
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Paper Abstract

The strain sensitive resonant gate transistor working as a strain gauge has been developed. This device is fabricated by using surface micro-machining techniques and CMOS technology. Poly-Si bridge is fixed to the FET structures and the bridge is encapsulated by a Poly-Si cell in order to keep it inside the vacuum. When the strain is applied to the bridge, the resonant frequency is changed. The shift of resonant frequency is converted to the frequency of alternating drain current. Some basically technological problems are in order to realize high sensitivity and reliability in this sensor. As a result, the strain sensitive sensor with the characterizations of high gage factor, high Q factor, no-sticking and wide-working-range is developed. Characterizations of this sensor have been demonstrated.

Paper Details

Date Published: 17 September 1996
PDF: 8 pages
Proc. SPIE 2882, Micromachined Devices and Components II, (17 September 1996); doi: 10.1117/12.250714
Show Author Affiliations
Shun-ichi Miyazaki, Yokogawa Electric Corp. (Japan)
Takashi Yoshida, Yokogawa Electric Corp. (Japan)
Kyoichi Ikeda, Yokogawa Electric Corp. (Japan)

Published in SPIE Proceedings Vol. 2882:
Micromachined Devices and Components II
Kevin H. Chau; Ray M. Roop, Editor(s)

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