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III-V membrane lasers integrated with Si nanowire waveguide (Conference Presentation)
Author(s): Takuma Aihara; Tatsurou Hiraki; Koji Takeda; Koichi Hasebe; Takuro Fujii; Tai Tsuchizawa; Takaaki Kakitsuka; Shinji Matsuo
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Paper Abstract

Si photonics technology is promising for reducing the size and cost of optical transmitters because we can use mature Si-CMOS technologies to fabricate compact Si photonics devices on a large-scale Si wafer. For the optical transmitters, integration of lasers and silicon photonic devices is essential. Recently, heterogeneously integrated devices consisting of InP-based lasers and silicon Mach-Zehnder modulators (MZMs) have been developed, where the thickness of the Si waveguide in the laser gain section needs to be ~500 nm for index matching. On the other hand, silicon waveguide thickness between 200 and 300 nm is typically used in Si photonic devices; therefore, a Si thickness transition is necessary between the laser gain section and silicon MZMs. For changing the Si thickness, additional etching, deposition, or growth of Si layers is needed. However, these are not suitable solutions because device performance would be degraded by increasing the surface roughness and thickness variations of the Si waveguide. In this work, we proposed a novel technique for integrating lasers and Si photonic devices without a Si thickness transition. We use a lateral current-injection membrane buried heterostructure (BH) as a laser gain section. This structure enables us to reduce the total thickness of the III-V region, resulting in the reduction of its effective refractive index. Therefore, the effective refractive index of the membrane BH laser can be matched to that of a 200-nm-thick Si waveguide, and the laser is suitable for integration with Si photonic devices.

Paper Details

Date Published: 13 March 2019
Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, 109390T (13 March 2019); doi: 10.1117/12.2506925
Show Author Affiliations
Takuma Aihara, NTT Device Technology Labs. (Japan)
Tatsurou Hiraki, NTT Device Technology Labs. (Japan)
Koji Takeda, NTT Device Technology Labs. (Japan)
Koichi Hasebe, NTT Device Technology Labs. (Japan)
Takuro Fujii, NTT Device Technology Labs. (Japan)
Tai Tsuchizawa, NTT Device Technology Labs. (Japan)
Takaaki Kakitsuka, NTT Device Technology Labs. (Japan)
Shinji Matsuo, NTT Device Technology Labs. (Japan)

Published in SPIE Proceedings Vol. 10939:
Novel In-Plane Semiconductor Lasers XVIII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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