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Proceedings Paper

High-power waveform generation using photoconductive switches
Author(s): Jeffrey A. Oicles; Heikki I. Helava; Jon R. Grant; Larry O. Ragle; Susan C. Wessman
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Paper Abstract

In the nanosecond time regime gallium arsenide photoconductive devices are nearly ideal circuit elements for the generation of wideband high-power waveforms. The ability to activate these devices in an avalanche mode further enhances their utility since semiconductor lasers with nanojoule-range pulsed output can enable turn-on. Furthermore characteristics of gaffium arsenide provide the ability to fabricate switches with significant DC hold off capability. In general microwave matching requirements tend to be in opposition to high-voltage integrity constraints. This creates formidable design challenges. Careful compromises in the packaging design have led to megawatt-level peak power outputs at multi-gigahertz frequencies from surprisingly small devices. Work to date has concentrated on monocycle generation for use with a wideband antenna structure. Resultant radiated outputs have applications in ultrawideband radar electronic warfare and communications.

Paper Details

Date Published: 1 March 1991
PDF: 10 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25067
Show Author Affiliations
Jeffrey A. Oicles, Power Spectra, Inc. (United States)
Heikki I. Helava, Power Spectra, Inc. (United States)
Jon R. Grant, Power Spectra, Inc. (United States)
Larry O. Ragle, Power Spectra, Inc. (United States)
Susan C. Wessman, Power Spectra, Inc. (United States)


Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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