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Proceedings Paper

GaAs opto-thyristor for pulsed power applications
Author(s): Jung H. Hur; Peyman Hadizad; Hanmin Zhao; Steven G. Hummel; Paul Daniel Dapkus; Harold R. Fetterman; Martin A. Gundersen
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Paper Abstract

An optically gated thyristor based on GaAs has been designed fabricated and investigated for pulsed power applications. The device included a 200-pm semi-insulating base layer and was triggered with an 848-nm 1-pJ 100-nsec laser diode. The DC blocking voltage of the thyristor was observed to be V the peak current 300 A and the current rate of rise A/sec. Lock-on effect was also observed and is discussed.

Paper Details

Date Published: 1 March 1991
PDF: 6 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25066
Show Author Affiliations
Jung H. Hur, Univ. of Southern California (United States)
Peyman Hadizad, Univ. of Southern California (United States)
Hanmin Zhao, Univ. of Southern California (United States)
Steven G. Hummel, Univ. of Southern California (United States)
Paul Daniel Dapkus, Univ. of Southern California (United States)
Harold R. Fetterman, Univ. of California/Los Angeles (United States)
Martin A. Gundersen, Univ. of Southern California (United States)


Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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