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Metal-semiconductor-metal photodetectors on a GeSn-on-insulator platform
Author(s): Bong Kwon Son; Yiding Lin; Wei Li; Kwang Hong Lee; Joe Margetis; David Kohen; John Tolle; Lin Zhang; Tina Guo Xin; Hong Wang; Chuan Seng Tan
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Paper Abstract

In this work, metal-semiconductor-metal photodetectors (MSM PDs) on a GeSn-on-insulator (GeSnOI) platform were demonstrated. This platform was realized by direct wafer bonding (DWB) and layer transfer methods using 9% Sn composition of GeSn film epitaxial-grown on Si. The compressive strain in the GeSn film was observed as ~0.23%, which indicates a significant reduction of the strain compared to the ~5.5% lattice mismatch at an interface of the Ge0.91Sn0.09/Si. GeSn MSM PDs demonstrated on a GeSnOI platform displayed a low dark current of 4nA at a 1V of bias voltage due to the insertion of a thin aluminum oxide (Al2O3) layer in an interface of metal/GeSn for an alleviation of Fermi-level pinning. The responsivity was 0.5 and 0.29 A/W at the wavelength of 1,600 and 2,033nm at 2V, respectively. This work paves the way for GeSnOI photonics as the next promising platform along with Si-on-insulator (SOI) and Ge-on-insulator (GOI) platforms for mid-infrared (MIR) communication and sensing applications.

Paper Details

Date Published: 27 February 2019
PDF: 7 pages
Proc. SPIE 10914, Optical Components and Materials XVI, 109141A (27 February 2019); doi: 10.1117/12.2506355
Show Author Affiliations
Bong Kwon Son, Nanyang Technological Univ. (Singapore)
Yiding Lin, Nanyang Technological Univ. (Singapore)
Singapore MIT Alliance for Research and Technology (Singapore)
Wei Li, Nanyang Technological Univ. (Singapore)
Kwang Hong Lee, Singapore MIT Alliance for Research and Technology (Singapore)
Joe Margetis, ASM America Inc. (United States)
David Kohen, ASM America Inc. (United States)
John Tolle, ASM America Inc. (United States)
Lin Zhang, Nanyang Technological Univ. (Singapore)
Tina Guo Xin, Nanyang Technological Univ. (Singapore)
Hong Wang, Nanyang Technological Univ. (Singapore)
Chuan Seng Tan, Nanyang Technological Univ. (Singapore)
Singapore MIT Alliance for Research and Technology (Singapore)

Published in SPIE Proceedings Vol. 10914:
Optical Components and Materials XVI
Shibin Jiang; Michel J. F. Digonnet, Editor(s)

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