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Proceedings Paper

HEMT terahertz detector enhanced by bow-tie antenna at room temperature
Author(s): Jinlun Li; Shaohui Cui; Jianxing Xu; Zhenwei Zhang; Haiqiao Ni; Zhichuan Niu
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Paper Abstract

The GaAs-based HEMT device is prepared by MBE. The device resistance is 300Ω. The structure size of the bow-tie antenna is simulated and optimized with HFSS. The optimization process uses a lumped source feed to realize the impedance matching of the bow-tie antenna and the two-dimensional electron gas (2DEG) channel. The optimized antenna gain can reach 6dB and the voltage standing wave ratio (VSWR) is 1.35. The VDI company 0.3THz terahertz source is used to measure the device. The measurement results show that the device has good polarization characteristics, the signal to noise ratio (SNR) is 80, the detection response rate is 5.11V/W, and the response rate is in the same order of magnitude as the theoretical calculation.

Paper Details

Date Published: 9 November 2018
PDF: 7 pages
Proc. SPIE 10826, Infrared, Millimeter-Wave, and Terahertz Technologies V, 108261Y (9 November 2018); doi: 10.1117/12.2506328
Show Author Affiliations
Jinlun Li, Army Engineering Univ. (China)
Institute of Semiconductors (China)
Shaohui Cui, Army Engineering Univ. (China)
Jianxing Xu, Microsystem & Terahertz Research Ctr. (China)
Zhenwei Zhang, Capital Normal Univ. (China)
Haiqiao Ni, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Zhichuan Niu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)

Published in SPIE Proceedings Vol. 10826:
Infrared, Millimeter-Wave, and Terahertz Technologies V
Cunlin Zhang; Xi-Cheng Zhang; Masahiko Tani, Editor(s)

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