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Experimental and theoretical analysis of the effect of packaging induced thermal stress on high-power laser diode arrays
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Paper Abstract

High power laser diodes have been widely utilized in many fields, like industry, scientific research, military and medical treatment, etc. However, thermal stress induced by packaging process due to CTE-mismatch between chip and heat-sink is the main source causing near-field non-linearity along laser bar (also known as “SMILE”), decreasing the degree of polarization (DoP), broadening spectrum, and degrading the lifetime of laser diode array (LDA). In this paper, the effect of packaging induced thermal stress on high power laser diode arrays was studied theoretically and experimentally. The FEM simulation and photoluminescence (PL) experimental results showed the difference of packaging induced thermal stress based on different packaging structures. Spectrally resolved spectrum of LDA showed the packaging induced stress is highest in the middle and rapidly drops near both ends of laser bar, in agreement with our theoretical simulation, resulting in spectral broadening due to blue shifting the lasing wavelength of the center emitter more than the edge emitters.

Paper Details

Date Published: 4 March 2019
PDF: 11 pages
Proc. SPIE 10900, High-Power Diode Laser Technology XVII, 109000T (4 March 2019); doi: 10.1117/12.2506212
Show Author Affiliations
Hongyou Zhang, Xi'an Institute of Optics and Precision Mechanics (China)
Univ. of Chinese Academy of Sciences (China)
Chung-En Zah, Focuslight Technologies, Inc. (China)
Xingsheng Liu, Univ. of Chinese Academy of Sciences (China)
Focuslight Technologies, Inc. (China)

Published in SPIE Proceedings Vol. 10900:
High-Power Diode Laser Technology XVII
Mark S. Zediker, Editor(s)

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