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Proceedings Paper

Photoquenching and characterization studies in a bulk optically controlled GaAs semiconductor switch
Author(s): Vishnu K. Lakdawala; Karl H. Schoenbach; Randy A. Roush; Gordon R. Barevadia; Michael S. Mazzola
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Paper Abstract

Copper compensated silicon doped semiinsulating gallium arsenide (GaAs:Si:Cu) has been shown to exhibit the characteristics of a high-power optically controlled switch that can be closed and opened on a nanosecond time scale [1]. In such switches it is possible to activate and deactivate photoconductivity on command with two laser pulses of different wavelengths [2]. Infrared quenching measurements at low fields show complete quenching of the persistent photoconductivity. At fields greater than 3. 5 kV/cm the quenching is temporarily effective against " lock-on" currents. In order to better understand the switch behavior and be able to optimize switch performance modeling studies have been performed. Basic deep level data for the modeling have been obtained from photo-induced current transient spectroscopy (PICTS). The method and results of measurements on basic deep level parameters such as activation energy are discussed. Experimental studies on current voltage characteristics at high fields show negative differential conductivity.

Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25061
Show Author Affiliations
Vishnu K. Lakdawala, Old Dominion Univ. (United States)
Karl H. Schoenbach, Old Dominion Univ. (United States)
Randy A. Roush, Old Dominion Univ. (United States)
Gordon R. Barevadia, Texas Instruments, Inc. (United States)
Michael S. Mazzola, Naval Surface Warfare Ctr. (United States)

Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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