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Proceedings Paper

High-power switching with electron-beam-controlled semiconductors
Author(s): Ralf Peter Brinkmann; Karl H. Schoenbach; Randy A. Roush; David C. Stoudt; Vishnu K. Lakdawala; Glenn A. Gerdin
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Paper Abstract

Measurements and model calculations on semi-insulating GaAs as material for optically and electron-beam controlled semiconductor switches have shown that the steady state current is a strongly nonlinear function of both the applied voltage and the radiation intensity. The nonlinear shape of these curves can be influenced over a wide range by doping with suitable deep acceptors or donors, a result which opens the possibility of "tailoring" the materials to meet specific demands. As an example, it is discussed how a current-controlled negative differential conductivity due to Cu-doping can be utilized for a fast (sub-nanosecond) e-beam controlled switch which operates at low dark current, high hold-off voltage and a forward resistance which lies considerably below the lock-on resistance.

Paper Details

Date Published: 1 March 1991
PDF: 6 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25054
Show Author Affiliations
Ralf Peter Brinkmann, Old Dominion Univ. (United States)
Karl H. Schoenbach, Old Dominion Univ. (United States)
Randy A. Roush, Old Dominion Univ. (United States)
David C. Stoudt, Old Dominion Univ. (United States)
Vishnu K. Lakdawala, Old Dominion Univ. (United States)
Glenn A. Gerdin, Old Dominion Univ. (United States)

Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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