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Proceedings Paper

Generic applications for Si and GaAs optical switching devices utilizing semiconductor lasers as an optical source
Author(s): Arye Rosen; Paul J. Stabile; Fred J. Zutavern; Guillermo M. Loubriel
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Paper Abstract

Switches comprising semiconductor devices such as GaAs or Si switch devices and semiconductor lasers as activating devices are small efficient and reasonable in cost. Optically controlled Si PIN or bulk devices having long carrier lifetime switch cw high power signals in broad-band RF applications. They utilize pulsed laser diode arrays that require low average power. A cw HF switch was obtained utilizing a twodimensional (2-D) laser array that was pulse biased to 10 kHz. Optically activated GaAs devices with nano-second risetimes which utilize the phenomenon of lock-on are used for mega-watt switching applications such as impulse radar and firesets. A new high impedance 2-D laser array which was switched on in 700 Ps and delivered a peak power of 545W has also been achieved.

Paper Details

Date Published: 1 March 1991
PDF: 8 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25053
Show Author Affiliations
Arye Rosen, David Sarnoff Research Ctr. (United States)
Paul J. Stabile, David Sarnoff Research Ctr. (United States)
Fred J. Zutavern, Sandia National Labs. (United States)
Guillermo M. Loubriel, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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