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Recent advances in rapid polishing process of large aperture optical flats
Author(s): Ruiqing Xie; Shijie Zhao; Defeng Liao; Xianhua Chen; Jian Wang; Qiao Xu; Huiying Zhao; Zhuangde Jiang
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Paper Abstract

A full aperture rapid polishing process (RPP) have been developed for batch producing high-precision large aperture optical flats required in some extreme application, such as high power laser, extreme ultraviolet lithography. Combining the theory of ultra-precision machine and chemical mechanical polishing, RPP can polish out the large aperture flat optical components in several hours or less. The material removal rate of fused silica component can be enhanced to ≥12 μm/h in RPP, which polishing efficiency is more than ten times of traditional pitch polishing process. The surface roughness also can be down to 0.3nm (RMS). Through several process improvements, the surface figure is determinately controlled, and subsurface damage can be quickly removed and suppressed. At last, high accuracy optical components can be obtained with high flatness (sub-micron), super smooth (sub-nanometer), and near-zero defects (SSD density ≤0.02 def/cm2 ).

Paper Details

Date Published: 30 January 2019
PDF: 7 pages
Proc. SPIE 10841, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics, 108410V (30 January 2019); doi: 10.1117/12.2505131
Show Author Affiliations
Ruiqing Xie, Research Ctr. of Laser Fusion (China)
Xi′an Jiaotong Univ. (China)
Shijie Zhao, Research Ctr. of Laser Fusion (China)
Defeng Liao, Research Ctr. of Laser Fusion (China)
Xianhua Chen, Research Ctr. of Laser Fusion (China)
Jian Wang, Research Ctr. of Laser Fusion (China)
Qiao Xu, Research Ctr. of Laser Fusion (China)
Huiying Zhao, Xi'an Jiaotong Univ. (China)
Zhuangde Jiang, Xi'an Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 10841:
9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Meta-Surface-Wave and Planar Optics
Mingbo Pu; Xiaoliang Ma; Xiong Li; Minghui Hong; Changtao Wang; Xiangang Luo, Editor(s)

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