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Proceedings Paper

The new-type silicon photomultiplier for ToF LiDAR and other pulse detecting applications
Author(s): Dmitry A. Shushakov; Sergey V. Bogdanov; Nikolay A. Kolobov; Evgeny V. Levin; Yury I. Pozdnyakov; Timofey V. Shpakovskiy; Vitaly E. Shubin; Konstantin Yu. Sitarsky; Rostislav A. Torgovnikov
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Paper Abstract

DEPHAN detector is a prototype of a new-type silicon photomultiplier (HD-SiPM) with the amplifying channels (cells) integrated into solid photosensitive area. The new proposed design enables to increase cell density (4.5⋅104 per sq. mm) and significantly widen dynamic range of the detector preserving or even improving its fill factor (>80%) and cross-talk probability (<2%). Threshold sensitivity of the “LiDAR-emulating” system for red and NIR wavelength, its dependence on background illumination, and other key characteristics were measured with the DEPHAN detector and reference detectors (APD, SiPM). Results confirm prospects of the new-type detector for ToF-LiDAR and 3D-imaging systems.

Paper Details

Date Published: 8 November 2018
PDF: 9 pages
Proc. SPIE 10817, Optoelectronic Imaging and Multimedia Technology V, 108170J (8 November 2018); doi: 10.1117/12.2505120
Show Author Affiliations
Dmitry A. Shushakov, DEPHAN LLC (Russian Federation)
P.N. Lebedev Physical Institute (Russian Federation)
Sergey V. Bogdanov, DEPHAN LLC (Russian Federation)
P.N. Lebedev Physical Institute (Russian Federation)
Nikolay A. Kolobov, DEPHAN LLC (Russian Federation)
Evgeny V. Levin, DEPHAN LLC (Russian Federation)
Yury I. Pozdnyakov, DEPHAN LLC (Russian Federation)
Russian Quantum Ctr. (Russian Federation)
Timofey V. Shpakovskiy, DEPHAN LLC (Russian Federation)
Vitaly E. Shubin, DEPHAN LLC (Russian Federation)
P.N. Lebedev Physical Institute (Russian Federation)
Konstantin Yu. Sitarsky, DEPHAN LLC (Russian Federation)
P.N. Lebedev Physical Institute (Russian Federation)
Rostislav A. Torgovnikov, DEPHAN LLC (Russian Federation)


Published in SPIE Proceedings Vol. 10817:
Optoelectronic Imaging and Multimedia Technology V
Qionghai Dai; Tsutomu Shimura, Editor(s)

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