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Proceedings Paper

Ultra-wide and nearly flat-top gain spectrum in asymmetric quantum-well structure for InGaAs tunable lasers
Author(s): Q.-N. Yu; X. Li; M. Zheng; W. Lu; X. Zhang; J. Wu
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Paper Abstract

For tunable quantum well lasers, it has been a huge challenge all along how to achieve an ultra-wide tuning spectrum far exceeding the full width at half maximum (FWHM) of gain in a classic quantum well and the uniform power output for all tunable wavelengths of the laser under a fixed injection power, especially based on a single well structure. In this paper, we are reporting some amazing results from a special asymmetrical InGaAs quantum well structure, with which both incredibly extremely-wide and nearly uniform gain spectra are obtained with a fixed injection power. The excellent gain characteristics may make above dream come ture for the InGaAs-based tunable lasers. The formation of the structure is associated with the Indium-rich island effect. The analysis showed that the spectrally-tunable range from this special well structure could be up to 6 times as broad as the FWHM of gain in the classic InGaAs well and the gain spectrum with quasi-rectangular feature in transverse electric mode was obtained as well. It enables nearly identical power output over the total spectrally tunable range of the laser to be realized with a fixed optical injection power.

Paper Details

Date Published: 15 November 2018
PDF: 5 pages
Proc. SPIE 10964, Tenth International Conference on Information Optics and Photonics, 1096418 (15 November 2018); doi: 10.1117/12.2505115
Show Author Affiliations
Q.-N. Yu, Beihang Univ. (China)
X. Li, Changchun Institute of Optics, Fine Mechanics and Physics (China)
M. Zheng, Beihang Univ. (China)
W. Lu, Beihang Univ. (China)
X. Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
J. Wu, Beihang Univ. (China)


Published in SPIE Proceedings Vol. 10964:
Tenth International Conference on Information Optics and Photonics
Yidong Huang, Editor(s)

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