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Efficiency enhancement of InGaN/GaN light-emitting diodes with a p-i-n electron blocking layer
Author(s): Jun Wang; Jin Guo; Junbo Feng; Guosheng Wang; Feng Xie
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Paper Abstract

In this paper, we proposed a p-i-n AlGaN EBL, which is easy to realize in epitaxy, to enhance the electron confinement and improve the hole injection efficiency. The physical and optical properties of GaN-based MQW LEDs with the conventional EBL are also investigated comparatively. The simulation results show that the LEDs with the p-i-n EBL exhibit much higher output power and smaller efficiency droop at high current as compared to those with the traditional EBL due to the enhancement of the electron confinement and improvement of the hole injection from p-type region, which are induced by the strong reverse electrostatic fields in the p-i-n EBL.

Paper Details

Date Published: 8 February 2019
PDF: 6 pages
Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 1084305 (8 February 2019); doi: 10.1117/12.2504893
Show Author Affiliations
Jun Wang, The 38th Research Institute of China Electronics Technology Group Corp. (China)
Jin Guo, The 38th Research Institute of China Electronics Technology Group Corp. (China)
Junbo Feng, The 38th Research Institute of China Electronics Technology Group Corp. (China)
Guosheng Wang, The 38th Research Institute of China Electronics Technology Group Corp. (China)
Feng Xie, The 38th Research Institute of China Electronics Technology Group Corp. (China)


Published in SPIE Proceedings Vol. 10843:
9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging
Yadong Jiang; Xiaoliang Ma; Xiong Li; Mingbo Pu; Xue Feng; Bernard Kippelen, Editor(s)

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