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8 x 8 format InGaAs/InP avalanche photodiode plane array for 3D imaging laser radar system
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Paper Abstract

This paper reports a planar structure InGaAs/InP avalanche photodetector focal plane arrays. Their material structure use separate absorption, grading, charge and multiplication layer. The pixel pitch of 8×8 format detectors is 250 μm. The breakdown voltage (VBD) is typically in the range of 65 to 70 V for most of the devices on the same wafer. The typical dark current at 90% of VBD is 3 nA, dark currents as low as 0.5 nA at 90% of VBD have also been observed for some diodes, corresponding to a dark current density of 1 × 10-5 A/cm2. The photocurrent starts to increase at the "punch-through" voltage Vp of 43 V. The responsivity at 1.55 μm is 0.91 A/W at unity gain and the multiplication layer is estimated to be 1.2 μm. Each device on the same wafer has excellent characteristics and high uniformity through measurement, laying a solid foundation for 3D imaging laser radar systems.

Paper Details

Date Published: 8 February 2019
PDF: 6 pages
Proc. SPIE 10843, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging, 1084304 (8 February 2019); doi: 10.1117/12.2504875
Show Author Affiliations
Shuai Wang, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Qin Han, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Lili Hou, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Han Ye, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)
Ziqing Lu, Institute of Semiconductors (China)
Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10843:
9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing and Imaging
Yadong Jiang; Xiaoliang Ma; Xiong Li; Mingbo Pu; Xue Feng; Bernard Kippelen, Editor(s)

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