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Proceedings Paper

Research on high-frequency modulation characteristics of semiconductor laser
Author(s): Zhaohui Liu; Xizheng Ke; Ying Wang; Benkang Yin
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Paper Abstract

For the problem of low modulation rate and narrow modulation bandwidth of semiconductor lasers(LD),according to the LD rate equation, the expression of the relaxation oscillation frequency is derived.The influence of internal parameters on the modulation characteristics of laser is simulated from two aspects: time domain and frequency domain. The simulation results verify the correctness of the theoretical derivation. In addition, measures for improving the modulation characteristics of lasers are proposed. The results show that the larger modulation bandwidth and higher modulation rate can be achieved by increasing the steady state photon density and differential gain coefficient and reducing the photon lifetime and the gain saturation factor.

Paper Details

Date Published: 12 December 2018
PDF: 6 pages
Proc. SPIE 10844, Advanced Laser Technology and Applications, 108440F (12 December 2018); doi: 10.1117/12.2504858
Show Author Affiliations
Zhaohui Liu, Xi'an Univ. of Technology (China)
Xizheng Ke, Xi'an Univ. of Technology (China)
Ying Wang, Xi'an Univ. of Technology (China)
Benkang Yin, Xi'an Univ. of Technology (China)


Published in SPIE Proceedings Vol. 10844:
Advanced Laser Technology and Applications
Shibin Jiang; Lijun Wang; Zejin Liu; Wei Shi; Pu Zhou, Editor(s)

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