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A combination process of magnetorheological finishing and computer controlled optical surfacing on single-crystal silicon surface
Author(s): Chi Luo; Feng Shi; Ye Tian; Yaoyu Zhong
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Paper Abstract

The combination process of Magnetorheological finishing (MRF) and Computer controlled optical surfacing(CCOS) are adopted to overcome the drawback of traditional polishing method in final finishing of single-crystal silicon and the deterioration of the surface roughness of single-crystal silicon by Magnetorheological finishing. In order to meet the requirements of single-crystal silicon by magnetorheological finishing, a new magnetorheological finishing fluid is prepared and orthogonal process parameters experiments are designed to optimize the magnetorheological finishing parameters. Through the uniform finishing experiment of MRF and CCOS, the processing sequence conditions of the combined process are obtained. A single-crystal silicon mirror with diameter of 100 mm is finished with several iterations of MRF and CCOS, the surface roughness Ra reaches 0.7 nm which verified the prepared magnetorheological finishing fluid and the optimized parameters satisfied the Finishing requirements of the single-crystal silicon surface. The results prove that the combination of MRF and CCOS process has unique advantages in the final finishing of single-crystal silicon.

Paper Details

Date Published: 16 January 2019
PDF: 9 pages
Proc. SPIE 10838, 9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 108380A (16 January 2019); doi: 10.1117/12.2504810
Show Author Affiliations
Chi Luo, National Univ. of Defense Technology (China)
Feng Shi, National Univ. of Defense Technology (China)
Ye Tian, National Univ. of Defense Technology (China)
Yaoyu Zhong, National Univ. of Defense Technology (China)


Published in SPIE Proceedings Vol. 10838:
9th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Xiong Li; William T. Plummer; Bin Fan; Mingbo Pu; Yongjian Wan; Xiangang Luo, Editor(s)

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