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Proceedings Paper

GeSn on Si avalanche photodiodes for short wave infrared detection
Author(s): Dongliang Zhang; Xiaoyan Hu; Dachuan Liu; Xiao Lin; Weiping Wang; Ziyu Ding; Zhiqiang Wang; Buwen Cheng; Chunlai Xue
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Paper Abstract

A mesa-type normal incidence separate-absorption-charge-multiplication (SACM) Ge0.95Sn0.05/Si avalanche photodiode (APD) was fabricated. The 60-μm-diameter avalanche photodiode achieved a responsivity of ~5A/W (gain=24) and ~3.1A/W (gain=20) at 98% breakdown voltage (-14.2V) under 1310nm and 1550nm illumination respectively with a low dark current of 10μA. The −3 dB bandwidth for a 60-μm-diameter APD is about 1-1.25GHz for gains from 5 to 20, resulting in a gain-bandwidth product of 25GHz for a C-band communication wavelength of 1550nm.

Paper Details

Date Published: 12 December 2018
PDF: 8 pages
Proc. SPIE 10846, Optical Sensing and Imaging Technologies and Applications, 108461B (12 December 2018); doi: 10.1117/12.2504669
Show Author Affiliations
Dongliang Zhang, China Electronics Technology Group Corp. (China)
Xiaoyan Hu, China Electronics Technology Group Corp. (China)
Dachuan Liu, China Electronics Technology Group Corp. (China)
Xiao Lin, China Electronics Technology Group Corp. (China)
Weiping Wang, China Electronics Technology Group Corp. (China)
Ziyu Ding, China Electronics Technology Group Corp. (China)
Zhiqiang Wang, China Electronics Technology Group Corp. (China)
Buwen Cheng, Institute of Semiconductors (China)
Chunlai Xue, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 10846:
Optical Sensing and Imaging Technologies and Applications
Mircea Guina; Haimei Gong; Jin Lu; Dong Liu, Editor(s)

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