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Proceedings Paper

Optically triggered GaAs thyristor switches: integrated structures for environmental hardening
Author(s): Richard Franklin Carson; Harry T. Weaver; Robert C. Hughes; Thomas E. Zipperian; Thomas M. Brennan; B. Eugene Hammons
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Paper Abstract

Opticallytriggered thyristor switches often operate in adverse environments such as high temperature and high dose-rate transient radiation which can result in lowered operating voltage and premature triggering. These effects can be reduced by connecting or monolithically integrating a reverse-biased compensating photodiode or phototransistor into the gate of the optically-triggered thyristor. We have demonstrated the effectiveness of this hardening concept in silicon thyristors packaged with photodiodes and in gallium arsenide optically-triggered thyristors monolithically integrated with compensating phototransistors.

Paper Details

Date Published: 1 March 1991
PDF: 11 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25043
Show Author Affiliations
Richard Franklin Carson, Sandia National Labs. (United States)
Harry T. Weaver, Sandia National Labs. (United States)
Robert C. Hughes, Sandia National Labs. (United States)
Thomas E. Zipperian, Sandia National Labs. (United States)
Thomas M. Brennan, Sandia National Labs. (United States)
B. Eugene Hammons, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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