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Proceedings Paper

Graded AlxGa1-xAs photoconductive devices for high-efficiency picosecond optoelectronic switching
Author(s): Jeffrey D. Morse; Raymond P. Mariella Jr.; Robert W. Dutton
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Paper Abstract

Picoseccond photoconductivity has been achieved for a variety of semiconductor materials by techniques which have now become almost standard1. Enhanced scattering by the excessive amount of deep level defects which provide for picosecond recombination lifetimes significantly reduces the mobility, degrading the responsivity of the photoconductor. This paper will present a concept where improved responsivity is achievable by utilizing a graded bandgap AlxGaixAs active detecting layer grown on a high defect density GaAs layer by molecular beam epitaxy (MBE).

Paper Details

Date Published: 1 March 1991
PDF: 5 pages
Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); doi: 10.1117/12.25041
Show Author Affiliations
Jeffrey D. Morse, Lawrence Livermore National Lab. (United States)
Raymond P. Mariella Jr., Lawrence Livermore National Lab. (United States)
Robert W. Dutton, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 1378:
Optically Activated Switching
Fred J. Zutavern, Editor(s)

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