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Proceedings Paper

Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness
Author(s): Asha Rani; Kyle DiCamillo; Sergiy Krylyuk; Albert V. Davydov; Ratan Debnath; Payam Taheri; Makarand Paranjape; Can Korman; Mona Zaghloul
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Paper Abstract

In this study, electronic properties of field-effect transistors (FETs) fabricated from exfoliated MoTe2 single crystals are investigated as a function of channel thickness. The conductivity type in FETs gradually changes from n-type for thick MoTe2 layers (above ≈ 65 nm) to ambipolar behavior for intermediate MoTe2 thickness (between ≈ 60 and 15 nm) to ptype for thin layers (below ≈ 10 nm). The n-type behavior in quasi-bulk MoTe2 is attributed to doping with chlorine atoms from the TeCl4 transport agent used for the chemical vapor transport (CVT) growth of MoTe2. The change in polarity sign with decreasing channel thickness may be associated with increasing role of surface states in ultra-thin layers, which in turn influence carrier concentration and dynamics in the channel due to modulation of Schottky barrier height and band-bending at the metal/semiconductor interface.

Paper Details

Date Published: 11 September 2018
PDF: 6 pages
Proc. SPIE 10725, Low-Dimensional Materials and Devices 2018, 1072515 (11 September 2018); doi: 10.1117/12.2503888
Show Author Affiliations
Asha Rani, The George Washington Univ. (United States)
Kyle DiCamillo, Georgetown Univ. (United States)
Sergiy Krylyuk, National Institute of Standards and Technology (United States)
Theiss Research (United States)
Albert V. Davydov, National Institute of Standards and Technology (United States)
Ratan Debnath, National Institute of Standards and Technology (United States)
Payam Taheri, National Institute of Standards and Technology (United States)
Makarand Paranjape, Georgetown Univ. (United States)
Can Korman, The George Washington Univ. (United States)
Mona Zaghloul, The George Washington Univ. (United States)


Published in SPIE Proceedings Vol. 10725:
Low-Dimensional Materials and Devices 2018
Nobuhiko P. Kobayashi; A. Alec Talin; M. Saif Islam; Albert V. Davydov, Editor(s)

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