Share Email Print

Proceedings Paper • new

Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector
Author(s): Krystian Michalczewski; Tsung-Tin Tsai; Piotr Martyniuk; Chao-Sin Wu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We investigate the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoconductor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 μm and 6 μm at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 0.5 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb photocondotocr above 200 K.

Paper Details

Date Published: 14 August 2018
PDF: 6 pages
Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 1083010 (14 August 2018); doi: 10.1117/12.2503766
Show Author Affiliations
Krystian Michalczewski, Military Univ. of Technology (Poland)
Tsung-Tin Tsai, National Taiwan Univ. (Taiwan)
Piotr Martyniuk, Military Univ. of Technology (Poland)
Chao-Sin Wu, National Taiwan Univ. (Taiwan)

Published in SPIE Proceedings Vol. 10830:
13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods
Przemyslaw Struk; Tadeusz Pustelny, Editor(s)

© SPIE. Terms of Use
Back to Top