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Long term stability study of InAsSb mid-wave infrared HOT detectors passivated through two step passivation technique
Author(s): K. Michalczewski; F. Ivaldi; Ł. Kubiszyn; D. Benyahia; J. Ciosek; J. Boguski; A. Kębłowski; P. Martyniuk; J. Piotrowski; A. Rogalski
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Paper Abstract

We report on the investigation of the long term stability study of InAs1-xSbx (x=0.09) high operation temperature (HOT) photodiode grown on GaAs substrate. The electrochemical passivation technique was proposed to modify the mesa sidewalls properties and obtain anodic sulphur coating covered by SU-8 negative photoresist. The dark current densities of sulphur anodic film, SU-8 photoresist and unpassivated devices was compared. Obtained results indicates that the surface leakage current was not fully supressed by unipolar electron barrier. The most stable behaviour after an exposure of 6 months to atmosphere and annealing at 373 K for 72 h was observed for sulphur anodic passivation. This technique turned to be effective also in reduction of oxygen (O) 2s peak in X-ray photoelectron spectroscopy (XPS) in comparison with only etched sample.

Paper Details

Date Published: 14 August 2018
PDF: 5 pages
Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 108300Z (14 August 2018); doi: 10.1117/12.2503763
Show Author Affiliations
K. Michalczewski, Military Univ. of Technology (Poland)
F. Ivaldi, Vigo System S.A. (Poland)
Ł. Kubiszyn, Vigo System S.A. (Poland)
D. Benyahia, Military Univ. of Technology (Poland)
J. Ciosek, Military Univ. of Technology (Poland)
J. Boguski, Military Univ. of Technology (Poland)
A. Kębłowski, Vigo System S.A. (Poland)
P. Martyniuk, Military Univ. of Technology (Poland)
J. Piotrowski, Vigo System S.A. (Poland)
A. Rogalski, Military Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 10830:
13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods
Przemyslaw Struk; Tadeusz Pustelny, Editor(s)

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