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Theoretical investigation of properties of InAsSb mid-wave infrared detectors
Author(s): Emilia Gomółka; Małgorzata Kopytko; Piotr Martyniuk
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Paper Abstract

In this work we present the theoretical investigation of the electrical and optical properties of high operating temperature (HOT) mid-wavelength infrared detectors (5 μm at 230 K) based on InAsSb/AlSb heterostructures [1]. In this work the performance comparison of barrier detectors with different doping concentration of n-type absorbing layer is presented. The barrier structure was simulated by commercially available software APSYS. We report on the dependence of the calculated current responsivity on the active layer thickness for a different doping concentration and doping concentration for optimal absorber thickness. Moreover, we show the influence of the bottom contact material on device’s performance.

Paper Details

Date Published: 14 August 2018
PDF: 5 pages
Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 108300U (14 August 2018); doi: 10.1117/12.2503626
Show Author Affiliations
Emilia Gomółka, Military Univ. of Technology (Poland)
Małgorzata Kopytko, Military Univ. of Technology (Poland)
Piotr Martyniuk, Military Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 10830:
13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods
Przemyslaw Struk; Tadeusz Pustelny, Editor(s)

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